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Extra info for Advances in Electronics and Electron Phisics. Vol. 58
As we will show later, models based on a distribution of trapping centers throughout the oxide layer are also consistent with the data, whereas CDT models fail to agree with data obtained in type 2 experiments. Nevertheless, in order to present a brief review of the CDT model it will be necessary to assume that interface traps only are present and active MODELING OF IRRADIATED MOS STRUCTURES 43 in the oxide. In this case, if V,, > 0, holes would be swept toward the semiconductor and some of them would be trapped at the interface.
In type 2 experiments, V,, can be varied by the investigator in a completely arbitrary manner as D continues to increase monotonically with time. The overall structure of the resulting plots of V,, versus V,,(D) will be uniquely determined by the specific functional relationship between Vgr and D that was chosen. Consider, for example, the specific function V,,(D) shown in Fig. 13a. It is instructive to determine the flat-band voltage at the end of each irradiation increment for this example. In order to simplify the analysis, we will assume that history-dependence is totally nonexistent, so MODELING OF IRRADIATED MOS STRUCTURES 35 that the flat-band shift will be entirely determined by the piecewise-linear family of approximate curves shown in Fig.
MODELING OF IRRADIATED MOS STRUCTURES 41 IV. SIMPLE DESCRIPTIVE MODELS T o achieve maximum accuracy in modeling radiation effects in MOS structures it is necessary to formulate the problem in terms of a complete set of coupled nonlinear differential equations. These differential equations must include terms representing each and every one of the physical mechanisms that are thought to be active in the MOS structure during irradiation. Furthermore, each of the terms must be expressed in the specific form that most accurately describes the particular mechanism it represents.
Advances in Electronics and Electron Phisics. Vol. 58 by Author Unknown